Stability of magnetic tunnel junctions
نویسندگان
چکیده
When magnetic tunnel junctions (MTJ) are built into a memory device they will be arranged in a matrix; therefore some of the not addressed elements will be exposed to a significant field during the switching of one element. It has to be avoided that the state of not selected MTJ is changed during this process. Here we present data on the stability of MTJ against small fields which occur during a writing process. r 2002 Elsevier Science B.V. All rights reserved.
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تاریخ انتشار 2002